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igbt lowv ce(sat) igbtintrenchstop tm 5technologycopackedwithrapid2 fastandsoftantiparalleldiode IKW30N65NL5 650vduopackigbtanddiode lowv ce(sat) seriesfifthgeneration datasheet industrialpowercontrol
2 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 lowv ce(sat) igbtintrenchstop tm 5technologycopackedwithrapid2 fastandsoftantiparalleldiode featuresandbenefits: lowv ce(sat) l5technologyoffering ?verylowcollector-emittersaturationvoltagev cesat ?best-in-classtradeoffbetweenconductionandswitchinglosses ?650vbreakdownvoltage ?lowgatechargeq g ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating ?rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?uninterruptiblepowersupplies ?solarphotovoltaicinverters ?weldingmachines keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKW30N65NL5 650v 30a 1.05v 175c k30enl5 pg-to247-3 g c e g c e
3 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 g c e g c e
4 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 650 v dccollectorcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i c 85.0 62.0 a pulsedcollectorcurrent, t p limitedby t vjmax 1) i cpuls 120.0 a turn off safe operating area v ce 650v, t vj 175c, t p =1s 1) - 120.0 a diodeforwardcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i f 50.0 34.0 a diodepulsedcurrent, t p limitedby t vjmax 1) i fpuls 120.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s,d<0.010) v ge 20 30 v powerdissipation t c =25c powerdissipation t c =100c p tot 227.0 114.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, 2) wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.66 k/w diode thermal resistance, junction - case r th(j-c) 0.95 k/w thermal resistance junction - ambient r th(j-a) 40 k/w 1) defined by design. not subject to production test. 2) package not recommended for surface mount applications. g c e g c e
5 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 650 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =30.0a t vj =25c t vj =100c t vj =150c - - - 1.05 1.05 1.04 1.35 - - v diode forward voltage v f v ge =0v, i f =30.0a t vj =25c t vj =100c t vj =150c - - - 1.65 1.70 1.68 2.20 - - v gate-emitter threshold voltage v ge(th) i c =0.40ma, v ce = v ge 4.2 5.0 5.8 v zero gate voltage collector current i ces v ce =650v, v ge =0v t vj =25c t vj =150c t vj =175c - - - 400.0 2000.0 40.0 - - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =30.0a - 65.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 4600 - output capacitance c oes - 64 - reverse transfer capacitance c res - 18 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =520v, i c =30.0a, v ge =15v - 168.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 59 - ns rise time t r - 20 - ns turn-off delay time t d(off) - 283 - ns fall time t f - 67 - ns turn-on energy e on - 0.56 - mj turn-off energy e off - 1.35 - mj total switching energy e ts - 1.91 - mj t vj =25c, v cc =400v, i c =30.0a, v ge =0.0/15.0v, r g(on) =23.0 w , r g(off) =10.0 w , l s =60nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e
6 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 59 - ns diode reverse recovery charge q rr - 0.48 - c diode peak reverse recovery current i rrm - 18.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -2800 - a/s t vj =25c, v r =400v, i f =30.0a, di f /dt =1500a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =150c turn-on delay time t d(on) - 54 - ns rise time t r - 22 - ns turn-off delay time t d(off) - 345 - ns fall time t f - 169 - ns turn-on energy e on - 0.69 - mj turn-off energy e off - 2.18 - mj total switching energy e ts - 2.87 - mj t vj =150c, v cc =400v, i c =30.0a, v ge =0.0/15.0v, r g(on) =23.0 w , r g(off) =10.0 w , l s =60nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =150c diode reverse recovery time t rr - 58 - ns diode reverse recovery charge q rr - 0.65 - c diode peak reverse recovery current i rrm - 24.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -4970 - a/s t vj =150c, v r =400v, i f =30.0a, di f /dt =1500a/s g c e g c e
7 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 figure 1. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c, v ge =15v, t p =1s, i cmax definedbydesign-notsubjectto production test) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 not for linear use figure 2. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200 225 250 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 figure 4. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 70 80 90 v ge = 20v 18v 15v 12v 10v 8v 7v 6v g c e g c e
8 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 figure 5. typicaloutputcharacteristic ( t vj =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 70 80 90 v ge = 20v 18v 15v 12v 10v 8v 7v 6v 5v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 3 4 5 6 7 8 9 0 10 20 30 40 50 60 70 80 90 t vj =25c t vj =150c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 25 50 75 100 125 150 175 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 i c =7.5a i c =15a i c =30a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =23 w , r g(off) =10 w ,dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 10 20 30 40 50 60 70 80 90 1 10 100 1000 t d(off) t f t d(on) t r g c e g c e
9 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 figure 9. typicalswitchingtimesasafunctionofgate resistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =30a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] t ,switchingtimes[ns] 0 10 20 30 40 50 60 70 80 90 1 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =30a, r g(on) =23 w , r g(off) =10 w ,dynamic test circuit in figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.4ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 175 1 2 3 4 5 6 7 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =23 w , r g(off) =10 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 10 20 30 40 50 60 70 80 90 0 1 2 3 4 5 6 7 8 e off e on e ts g c e g c e
10 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 figure 13. typicalswitchingenergylossesasa functionofgateresistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =30a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] e ,switchingenergylosses[mj] 0 10 20 30 40 50 60 70 80 90 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =30a, r g(on) =23 w , r g(off) =10 w ,dynamic test circuit in figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =150c, v ge =0/15v, i c =30a, r g(on) =23 w , r g(off) =10 w ,dynamic test circuit in figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 e off e on e ts figure 16. typicalgatecharge ( i c =30a) q g ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 12 14 16 v cc =130v v cc =520v g c e g c e
11 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 10 100 1000 1e+4 c ies c oes c res figure 18. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.0107 2.0e-5 2 0.15506 2.2e-4 3 0.17294 2.0e-3 4 0.29017 0.01147 5 0.02714 0.09256 6 2.2e-3 1.82712 figure 19. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.031494 2.5e-5 2 0.220947 2.1e-4 3 0.291265 1.7e-3 4 0.366808 0.010113 5 0.03663 0.08082 6 2.3e-3 1.811337 figure 20. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 500 1000 1500 2000 2500 3000 30 40 50 60 70 80 90 100 110 120 130 140 150 t vj =25c, i f =30a t vj =150c, i f =30a g c e g c e
12 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 figure 21. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 500 1000 1500 2000 2500 3000 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 t vj =25c, i f =30a t vj =150c, i f =30a figure 22. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 35 40 t vj =25c, i f =30a t vj =150c, i f =30a figure 23. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 500 1000 1500 2000 2500 3000 -7000 -6000 -5000 -4000 -3000 -2000 -1000 0 t vj =25c, i f =30a t vj =150c, i f =30a figure 24. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 70 80 90 t vj =25c t vj =175c g c e g c e
13 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 figure 25. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 i f =7.5a i f =15a i f =30a g c e g c e
14 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 g c e g c e pg-to247-3
15 IKW30N65NL5 lowv ce(sat) seriesfifthgeneration rev.2.1,2014-12-10 g c e g c e pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce
16 IKW30N65NL5 low v ce(sat) series fifth generation rev. 2.1, 2014-12-10 revision history IKW30N65NL5 previous revision revision date subjects (major changes since last revision) 2.1 2014-12-10 final data sheet g c e g c e pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce

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